IRFN250
International Rectifier
POWER MOSFET N-CHANNEPrevious Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1549
HEXFET® POWER MOSFET
200 Volt, 0.100Ω HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
IRFN250SMD
Seme LAB
N-CHANNEL POWER MOSFET
IRFN250SMD
MECHANICAL DATA Dimensions in mm (inches)
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
N–CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 )