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IRFM210A  

Fairchild Semiconductor
Fairchild Semiconductor

IRFM210A

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 Ω (T




관련 부품 IRFM21 상세설명

IRFM214B  

  
250V N-Channel MOSFET

IRFM214B November 2001 IRFM214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr



Fairchild Semiconductor
Fairchild Semiconductor

PDF



IRFM210B  

  
200V N-Channel MOSFET

IRFM210B November 2001 IRFM210B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr



Fairchild Semiconductor
Fairchild Semiconductor

PDF




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