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Datasheet IRFL9110 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFL9110 | Power MOSFET ( Transistor ) PD - 90864A
IRFL9110
HEXFET® Power MOSFET
l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling
G
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best comb |
 International Rectifier |
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| 2 | IRFL9110 | Power MOSFET ( Transistor ) www.vishay.com
IRFL9110, SiHFL9110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
-100 VGS = -10 V
8.7 2.2 4.1 Single
1.2
S
SOT-223 D
S D G
Marking code: FF
G
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free |
 Vishay |
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| 1 | IRFL9110PBF | HEXFET Power MOSFET PD - 95320
IRFL9110PbF
HEXFET® Power MOSFET
Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free
D
VDSS = -100V RDS(on) = 1.2Ω
G
ID = -1.1A
S
Description
Third Generation HEXFETs fro |
International Rectifier |
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