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Datasheet IRFL9014 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRFL9014 | Power MOSFET ( Transistor ) PD - 90863A
IRFL9014
HEXFET® Power MOSFET
l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling
D
VDSS = -60V RDS(on) = 0.50Ω
G
ID = -1.8A
S
Description
Third Generation HEXFETs from International Rec |
 International Rectifier |
 |
| 3 | IRFL9014 | Power MOSFET ( Transistor ) PD - 90863A
IRFL9014
HEXFET® Power MOSFET
l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling
D
VDSS = -60V RDS(on) = 0.50Ω
G
ID = -1.8A
S
Description
Third Generation HEXFETs from International Rec |
International Rectifier |
|
| 2 | IRFL9014 | Power MOSFET ( Transistor ) IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = -10 V 12 3.8 5.1 Single
S
FEATURES
-60 0.50
• • • • • • • •
Surface mount Available in tape and reel Dynamic dV/dt rating R |
 Vishay |
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| 1 | IRFL9014PBF | Power MOSFET ( Transistor ) PD - 95153
IRFL9014PbF
HEXFET® Power MOSFET
l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free
D
VDSS = -60V RDS(on) = 0.50Ω
G S
Description
Third Generation HEXFETs from International R |
International Rectifier |
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