Datasheet IRFIZ48NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFIZ48NPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r	International Rectifier

IRFIZ48N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFIZ48N	Power MOSFET(Vdss=55V/ Rds(on)=0.016ohm/ Id=36A) PD 9.1407 PRELIMINARY IRFIZ48N HEXFET® Power MOSFET D l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated U G VDSS = 55V RDS(on) = 0.016Ω ID = 36A S Description Fifth Generat	International Rectifier
IRFIZ48NPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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