IRFIZ48N
International Rectifier
Power MOSFET(Vdss=55V/ Rds(on)=0.016ohm/ Id=36A)PD 9.1407
PRELIMINARY
IRFIZ48N
HEXFET® Power MOSFET
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l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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VDSS = 55V RDS(on) = 0.016Ω ID = 36A
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Descr
IRFIZ48NPBF
International Rectifier
Power MOSFET ( Transistor )l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing