IRFIZ46N
International Rectifier
Power MOSFET(Vdss=55V/ Rds(on)=0.020ohm/ Id=33A)PD - 9.1306A
IRFIZ46N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.020Ω ID = 33A
Description
Fif
IRFIZ46NPBF
International Rectifier
Power MOSFET ( Transistor )l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec