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Datasheet IRFIZ34E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
2 IRFIZ34E   Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A)

PD - 9.1674A IRFIZ34E HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFETs from Internationa
International Rectifier
International Rectifier
datasheet IRFIZ34E pdf
1 IRFIZ34EPBF   HEXFET Power MOSFET

PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.042Ω G S ID = 21A Description Fifth Generation HEXFETs from
International Rectifier
International Rectifier
datasheet IRFIZ34EPBF pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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