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Datasheet IRFIZ34E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRFIZ34E | Power MOSFET(Vdss=60V/ Rds(on)=0.042ohm/ Id=21A) PD - 9.1674A
IRFIZ34E
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 60V RDS(on) = 0.042Ω
G S
ID = 21A
Description
Fifth Generation HEXFETs from Internationa |
International Rectifier |
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1 | IRFIZ34EPBF | HEXFET Power MOSFET PD - 94839
IRFIZ34EPbF
l l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 0.042Ω
G S
ID = 21A
Description
Fifth Generation HEXFETs from |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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