Datasheet IRFIZ34A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFIZ34A	Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRFW/IZ34A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0	Fairchild Semiconductor

IRFIZ Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFIZ24N	Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A) PD - 9.1501A IRFIZ24N HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.07Ω ID = 14A Fifth Generation HEXFETs	International Rectifier
IRFIZ44G	HEXFET POWER MOSFET	International Rectifier
IRFIZ34G	Power MOSFET ( Transistor ) Datasheet.es IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 46 11 22 Single D FEATURES 60 0.050 • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f =	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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