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IRFIZ24N 전자부품 데이터시트
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IRFIZ24N 전자부품 회로 및
기능 검색 결과
IRFIZ24N
International Rectifier
Power MOSFET(Vdss=55V/ Rds(on)=0.07ohm/ Id=14A)
PD - 9.1501A
IRFIZ24N
HEXFET® Power MOSFET
Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.07Ω ID = 14A
Fifth
IRFIZ24NPBF
International Rectifier
Power MOSFET ( Transistor )
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie
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PartNumber.co.kr | 2020 | 연락처 |