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Datasheet IRFIB7N50A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFIB7N50A | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=6.6A) PD - 91810
SMPS MOSFET
IRFIB7N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and |
 International Rectifier |
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| 2 | IRFIB7N50A | Power MOSFET ( Transistor ) IRFIB7N50A, SiHFIB7N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
52 13 18 Single
0.52
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive Requirement
Avai |
 Vishay |
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| 1 | IRFIB7N50APBF | SMPS MOSFET SMPS MOSFET
PD - 94805
IRFIB7N50APbF
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche an |
International Rectifier |
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