IRFI840B
Fairchild Semiconductor
500V N-Channel MOSFETIRFW840B / IRFI840B
November 2001
IRFW840B / IRFI840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology ha
IRFI840GPBF
Power MOSFET ( Transistor )PD - 94864
IRFI840GPbF
• Lead-Free
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12/03/03
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IRFI840GPbF
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International Rectifier
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IRFI840GLCPBF
HEXFET Power MOSFETPD - 94865
IRFI840GLCPbF
• Lead-Free
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12/4/03
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IRFI8
International Rectifier
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IRFI840A
Advanced Power MOSFET$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.)
IRFW/I840A
BVDSS = 500 V RDS(
Fairchild Semiconductor
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