IRFI830B
Fairchild Semiconductor
500V N-Channel MOSFETIRFW830B / IRFI830B
November 2001
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology ha
IRFI830A
Power MOSFET ( Transistor )
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýý
Samsung
PDF
IRFI830
500V N-Channel MOSFETIRFW830B / IRFI830B
November 2001
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o
Fairchild Semiconductor
PDF