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• Lead-Free PD - 95607 IRFI624GPbF www.irf.com 1 7/29/04 IRFI624GPbF 2 www.irf.com IRFI624GPbF www.irf.com 3 IRFI624GPbF 4 www.irf.com IRFI624GPbF www.irf.com 5 IRFI624GPbF 6 www.irf.com IRFI624GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray I
Power MOSFET IRFI624G, SiHFI624G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single 1.1 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Pac
IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o
$GYDQFHG 3RZHU 026)(7 IRFW/I624A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.742Ω (Typ.) Absolute Maximum R
Power MOSFET IRFI620G, SiHFI620G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.80 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t =
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