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IRFI620A 전자부품 데이터시트



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IRFI620A  

Fairchild Semiconductor
Fairchild Semiconductor

IRFI620A

Power MOSFET ( Transistor )

Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) Ab




관련 부품 IRFI62 상세설명

IRFI624GPBF  

  
Power MOSFET ( Transistor )

• Lead-Free PD - 95607 IRFI624GPbF www.irf.com 1 7/29/04 IRFI624GPbF 2 www.irf.com IRFI624GPbF www.irf.com 3 IRFI624GPbF 4 www.irf.com IRFI624GPbF www.irf.com 5 IRFI624GPbF 6 www.irf.com IRFI624GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray I



International Rectifier
International Rectifier

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IRFI624G  

  
Power MOSFET ( Transistor )

Power MOSFET IRFI624G, SiHFI624G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single 1.1 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Pac



Vishay
Vishay

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IRFI624G  

  
Power MOSFET(Vdss=250V/ Rds(on)=1.1ohm/ Id=3.4A)



International Rectifier
International Rectifier

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IRFI624B  

  
250V N-Channel MOSFET

IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o



Fairchild Semiconductor
Fairchild Semiconductor

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IRFI624A  

  
Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRFW/I624A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.742Ω (Typ.) Absolute Maximum R



Fairchild Semiconductor
Fairchild Semiconductor

PDF



IRFI620G  

  
Power MOSFET

Power MOSFET IRFI620G, SiHFI620G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.80 TO-220 FULLPAK D G GDS S N-Channel MOSFET FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t =



Vishay
Vishay

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