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IRFI520A  

Fairchild Semiconductor
Fairchild Semiconductor

IRFI520A

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operati




관련 부품 IRFI52 상세설명

IRFI520GPBF  

  
HEXFET Power MOSFET

PD- 95392 IRFI520GPbF • Lead-Free www.irf.com 1 06/10/04 IRFI520GPbF 2 www.irf.com IRFI520GPbF www.irf.com 3 IRFI520GPbF 4 www.irf.com IRFI520GPbF www.irf.com 5 IRFI520GPbF 6 www.irf.com IRFI520GPbF www.irf.com 7 IRFI520GPbF TO-220 Full-Pak Package Outline Dimensions are show



International Rectifier
International Rectifier

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IRFI520G  

  
HEXFET POWER MOSFET



International Rectifier
International Rectifier

PDF



IRFI520N  

  
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A)

PD - 9.1362A PRELIMINARY IRFI520N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 100V G S RDS(on) = 0.20Ω ID = 7.6A Description Fifth Generation HEXFETs from



International Rectifier
International Rectifier

PDF




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