IRFI520A
Fairchild Semiconductor
Advanced Power MOSFETAdvanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
IRFW/I520A
BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A
D2-PAK
2
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operati
IRFI520GPBF
HEXFET Power MOSFETPD- 95392
IRFI520GPbF
Lead-Free
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TO-220 Full-Pak Package Outline
Dimensions are show
International Rectifier
PDF
IRFI520N
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=7.6A)PD - 9.1362A
PRELIMINARY
IRFI520N
D
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.20Ω ID = 7.6A
Description
Fifth Generation HEXFETs from
International Rectifier
PDF