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IRFI1310N 전자부품 데이터시트



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IRFI1310N  

International Rectifier
International Rectifier

IRFI1310N

Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A)

PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRFI1310N HEXFET® Power MOSFET D VDSS = 100V G S RDS(on) = 0.036Ω



IRFI1310NPBF  

Infineon
Infineon

IRFI1310NPBF

Power MOSFET ( Transistor )

   Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free   Description Fifth Generation HEXFETs from International Rectifier utilize adv



IRFI1310NPBF  

International Rectifier
International Rectifier

IRFI1310NPBF

Power MOSFET ( Transistor )

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech



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