IRFI1310N
International Rectifier
Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=24A)PD - 9.1611A
PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
IRFI1310N
HEXFET® Power MOSFET
D
VDSS = 100V
G S
RDS(on) = 0.036Ω
IRFI1310NPBF
Infineon
Power MOSFET ( Transistor )
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
Description Fifth Generation HEXFETs from International Rectifier utilize adv
IRFI1310NPBF
International Rectifier
Power MOSFET ( Transistor )l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech