Datasheet IRFI1010NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFI1010NPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r	International Rectifier

IRFI1010N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFI1010N	Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) PD - 9.1373A IRFI1010N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.012Ω G ID = 49A S Description Fifth Generation HEXF	International Rectifier
IRFI1010NPBF	Power MOSFET ( Transistor ) l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev	International Rectifier

Esta página es del resultado de búsqueda del IRFI1010NPBF. Si pulsa el resultado de búsqueda de IRFI1010NPBF se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap