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Datasheet IRFF310 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRFF310 | 1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET IRFF310
Data Sheet March 1999 File Number 1888.3
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc |
Intersil Corporation |
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2 | IRFF310 | HEXFET TRANSISTORS PD-90425D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF310
400V 3.6Ω
ID 1.25A
IRFF310 JANTX2N6786 JANTXV2N6786
REF:MIL-PRF-19500/556
400V, N-CHANNEL
The HEXFET®technology is the key to International
Recti |
International Rectifier |
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1 | IRFF310 | Trans MOSFET N-CH 400V 1.25A 3-Pin TO-39 |
New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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