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Datasheet IRFF110 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRFF110 | 3.5A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET IRFF110
Data Sheet March 1999 File Number 1562.3
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanch |
 Intersil Corporation |
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| 4 | IRFF110 | (IRFF110 - IRFF113) Power MOS Field-Effect Transistors |
 GE Solid State |
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| 3 | IRFF110 | Trans MOSFET N-CH 100V 3.5A 3-Pin TO-39 |
 New Jersey Semiconductor |
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| 2 | IRFF110 | HEXFET TRANSISTORS PD - 90423C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
IRFF110
100V
RDS(on) .60Ω
ID 3.5A
IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL
The HEXFETtechnology is the key to International
Rectifi |
 International Rectifier |
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