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IRFD320  

Intersil Corporation
Intersil Corporation

IRFD320

0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET

IRFD320 Data Sheet July 1999 File Number 2325.4 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified le



IRFD320  

Vishay
Vishay

IRFD320

Power MOSFET ( Transistor )

www.vishay.com IRFD320, SiHFD320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D HVMDIP S G D G S N-Channel MOSFET FEATURES • Dynamic dV/dt rat



IRFD320  

International Rectifier
International Rectifier

IRFD320

Power MOSFET(Vdss=400V/ Rds(on)=1.8ohm/ Id=0.49A)

Previous Datasheet Index Next Data Sheet PD -9.1226 IRFD320 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description Third Generatio



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