IRFBE30L
Vishay
Power MOSFET ( Transistor )IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
800 VGS = 10 V
78 9.6 45 Single
3.0
I2PAK (TO-262)
D2PAK (TO-263)
D
G
G SD GD S
ORDERING INFORM
IRFBE30LPBF
International Rectifier
HEXFET Power MOSFET
PD - 95507
IRFBE30SPbF IRFBE30LPbF
O O O O O O
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET® Power MOSFET
D
VDSS = 800V
G S
RDS(on) = 3.0Ω ID = 4.1A