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Datasheet IRFBC40 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 20 | IRFBC40 | N - CHANNEL 600V - 1.0ohm - 6.2 A - TO-220 PowerMESH] MOSFET ®
IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET
TYPE IRFBC40
s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 6.2 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This |
 STMicroelectronics |
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| 19 | IRFBC40 | 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET IRFBC40
Data Sheet July 1999 File Number
2157.3
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 18 | IRFBC40 | 6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs Semiconductor
IRFBC40, IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t |
 Harris Corporation |
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| 17 | IRFBC40 | Power MOSFET(Vdss=600V/ Rds(on)max=1.2ohm/ Id=6.2A) |
 International Rectifier |
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