Datasheet IRFBC30AL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFBC30AL	Power MOSFET ( Transistor ) IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.4 11 Single I2PAK (TO-262) D2PAK (TO-263) 2.2 D G D S G S N-Channel MOSFET FEATURES • Halogen-free According t	Vishay

IRFBC3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFBC30	N - CHANNEL 600V - 1.8 ohm - 3.6A - TO-220 PowerMESH]II MOSFET ® IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET TYPE IRFBC30 s s s s s V DSS 600 V R DS(on) < 2.2 Ω ID 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZ	STMicroelectronics
IRFBC30	Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)	International Rectifier
IRFBC30	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·High current ,high speed switching ·Switch mode power	Inchange Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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