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Datasheet IRF9Z14 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF9Z14 | Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) |
 International Rectifier |
 |
| 3 | IRF9Z14L | Power MOSFET ( Transistor ) IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
0.50
I2PAK (TO-262)
D2PAK (TO-263)
S
G
SD
D G
S
G
D P-Channel MOSFET
FEATURES • Halogen |
 Vishay |
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| 2 | IRF9Z14S | Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) PD - 9.911A
IRF9Z14S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l l
D
VDSS = -60V RDS(on) = 0.50Ω
G S
ID = -6.7A
Third Gene |
International Rectifier |
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| 1 | IRF9Z14S | Power MOSFET ( Transistor ) IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
- 60 VGS = - 10 V
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
0.50
I2PAK (TO-262)
D2PAK (TO-263)
S
G
SD
D G
S
G
D P-Channel MOSFET
FEATURES • Halogen |
Vishay |
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