IRF9953
International Rectifier
Power MOSFET(Vdss=-30V/ Rds(on)=0.25ohm)PD - 9.1560A
PRELIMINARY
l l l l l l
IRF9953
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS
IRF9953PBF
International Rectifier
Power MOSFET ( Transistor )
PD - 95477
IRF9953PbF
Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2