IRF9952
International Rectifier
Power MOSFET(Vdss=+-30V)PD - 9.1561A
PRELIMINARY
l l l l l l
IRF9952
HEXFET® Power MOSFET
D1 D1 D2 D2
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
S1 G1 S2 G2
N -C H A N
IRF9952PBF
International Rectifier
HEXFET Power MOSFETPD - 95135
IRF9952PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2
IRF9952QPBF
International Rectifier
Power MOSFET ( Transistor )PD - 96115
IRF9952QPbF
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G