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Datasheet IRF9620 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRF9620 | 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET IRF9620
Data Sheet July 1999 File Number
2283.2
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 6 | IRF9620 | Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A) |
 International Rectifier |
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| 5 | IRF9620 | (IRF9620 - IRF9623) P-Channel Power MOSFETS |
 Samsung |
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| 4 | IRF9620 | Power MOSFET ( Transistor ) Power MOSFET
IRF9620, SiHF9620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 200 VGS = - 10 V
22 12 10 Single
1.5
TO-220AB
S
G
S D G
D P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt R |
 Vishay |
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