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Datasheet IRF9540 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | IRF9540 | 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs IRF9540, RF1S9540SM
Data Sheet July 1999 File Number
2282.6
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in |
 Intersil Corporation |
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| 13 | IRF9540 | Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) PD - 91437B
IRF9540N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
D
VDSS = -100V RDS(on) = 0.117Ω
G S
Description
Fifth Generation HEXFETs from International Rectifier utilize ad |
 International Rectifier |
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| 12 | IRF9540 | (IRF9540 - IRF9543) P-CHANNEL POWER MOSFETS
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 Harris Corporation |
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| 11 | IRF9540 | (IRF9540 / IRF9541) P-CHANNEL POWER MOSFETS
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 Samsung semiconductor |
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