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IRF9530NSPbF IRF9530NLPbF Benefits Advanced Process Technology Surface Mount (IRF9530NS) Low-profile through-hole(IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFET® Power MOSFETs f
PD- 95764 IRF9520NSPbF IF9520NLPbF Lead-Free www.irf.com 1 04/26/05 IRF9520NS/LPbF 2 www.irf.com IRF9520NS/LPbF www.irf.com 3 IRF9520NS/LPbF 4 www.irf.com IRF9520NS/LPbF www.irf.com 5 IRF9520NS/LPbF 6 www.irf.com IRF9520NS/LPbF www.irf.com 7 IRF9520NS/LPbF D2Pak Package Out
PD - 95411 IRF9520NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.8A Description Fifth Generation H
PD -91522A IRF9520NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.48Ω G ID = -6.8A S Fifth Gene
Power MOSFET IRF9530S, SiHF9530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 38 6.8 21 Single 0.30 S D2PAK (TO-263) G GD S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)
IRF9530SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .6 0 (0 .1 4 2 ) M a x . 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) F
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