Datasheet IRF9410PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF9410PBF	Power MOSFET ( Transistor ) PD - 95260 IRF9410PbF l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.030Ω 3	International Rectifier

IRF9410 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF9410	Power MOSFET(Vdss=30V/ Rds(on)=0.030ohm) PD - 9.1562A PRELIMINARY l l l l l l IRF9410 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G 1 2 A A D D D D VDSS = 30V RDS(on) = 0.030Ω 3 6	International Rectifier
IRF9410PBF	Power MOSFET ( Transistor ) PD - 95260 IRF9410PbF l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RD	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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