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Datasheet IRF9240 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF9240 | P-CHANNEL POWER MOSFET IRF9240 IRF9240–SMD
MECHANICAL DATA
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
P–CHANNEL POWER MOSFET
D
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max.
16.64 (0.655) 17.15 (0.675)
1 |
 Seme LAB |
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| 5 | IRF9240 | -11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET IRF9240
Data Sheet February 1999 File Number
2279.2
-11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval |
 Intersil Corporation |
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| 4 | IRF9240 | TRANSISTORS P-CHANNEL(Vdss=-200V/ Rds(on)=0.5ohm/ Id=-11A) PD - 90420
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A
IRF9240 200V, P-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transisto |
 International Rectifier |
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| 3 | IRF9240 | Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) TO-3 |
 New Jersey Semiconductor |
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