IRF831FI
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF831FI
DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) ·Fast Switching
IRF831
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF831
DESCRIPTION ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements
APPLICA
Inchange Semiconductor
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IRF8313PBF
Power MOSFET ( Transistor )
PD - 97145
IRF8313PbF
Applications
l l
HEXFET® Power MOSFET
Load Switch DC/DC Conversion
VDSS
RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC
Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested
International Rectifier
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