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Datasheet IRF831 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF831 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF831
DESCRIPTION ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements
APPLICA |
 Inchange Semiconductor |
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| 4 | IRF831 | N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
 Fairchild Semiconductor |
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| 3 | IRF831 | Trans MOSFET N-CH 450V 4.5A |
 New Jersey Semiconductor |
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| 2 | IRF8313PBF | Power MOSFET ( Transistor )
PD - 97145
IRF8313PbF
Applications
l l
HEXFET® Power MOSFET
Load Switch DC/DC Conversion
VDSS
RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC
Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested |
 International Rectifier |
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