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Datasheet IRF820 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 24 | IRF820 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF820
DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements
APPLICATI |
 Inchange Semiconductor |
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| 23 | IRF820 | N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
 Motorola Inc |
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| 22 | IRF820 | N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET ®
IRF820
N - CHANNEL 500V - 2.5 Ω - 2.5 A - TO-220 PowerMESH™ MOSFET
TYPE IRF820
s s s s s
V DSS 500 V
R DS(on) < 3Ω
ID 2.5 A
TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
2 3
DESCRIPTION This power |
 STMicroelectronics |
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| 21 | IRF820 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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