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Datasheet IRF7807V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRF7807V | N Channel Application Specific MOSFET PD-94108
IRF7807V
• • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses
S S S G
1
8 7
A D D D D
Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-res |
 International Rectifier |
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| 7 | IRF7807VD1 | FETKY MOSFET / SCHOTTKY DIODE PD-94078
IRF7807VD1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Description The FETKY™ fam |
International Rectifier |
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| 6 | IRF7807VD1PBF | HEXFET Power MOSFET PD - 95209
IRF7807VD1PbF
• Lead-Free
www.irf.com
1
11/3/04
IRF7807VD1PbF
2
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IRF7807VD1PbF
www.irf.com
3
IRF7807VD1PbF
4
www.irf.com
IRF7807VD1PbF
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5
IRF7807VD1PbF
6
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IRF7807VD1PbF
www.irf.com
7
IRF7807VD1PbF
SO-8 Package |
International Rectifier |
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| 5 | IRF7807VD1PBF-1 | Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = 4.5V)
Qg (typical) QSW (typical) QOSS (typical)
ID
(@TA = 25°C)
30 V
25 mΩ
9.5 nC 3.4 nC 12 nC
8.3 A
IRF7807VD1PbF-1
FETKY MOSFET / SCHOTTKY DIODE
SO-8
A/S 1 A/S 2
8 K/D 7 K/D
A/S 3
6 K/D
G4
5 K/D D
Top View
Applications l Co-Pack N-channel HEXFET® POWER MOSF |
International Rectifier |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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