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Datasheet IRF7757 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7757 | Power MOSFET(Vdss=20V) PD - 94174
IRF7757
HEXFET® Power MOSFET
l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration
VDSS
20V
RDS(on) max (mΩ)
35@VGS = 4.5V 40@VGS = 2.5V
ID
4.8A 3.8A
Description
HEXFET® Power M |
 International Rectifier |
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| 2 | IRF7757GPBF | Power MOSFET ( Transistor ) PD- 96154A
IRF7757GPbF
l l l l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Common Drain Configuration Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
20V
RDS(on) max (mW)
35@VGS = 4.5V 40@VGS = 2.5V
ID
4.8A 3.8A
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International Rectifier |
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| 1 | IRF7757PbF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Common Drain Configuration l Lead-Free
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r |
International Rectifier |
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