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Datasheet IRF7751 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7751 | Power MOSFET(Vdss=-30V) PD - 94002
IRF7751
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
ID
-4.5A -3.8A
Description
HEXFET® power MOSFETs from Internationa |
 International Rectifier |
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| 2 | IRF7751GPBF | Power MOSFET ( Transistor ) PD - 96145A
IRF7751GPbF
l l l l l l l
Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
HEXFET® Power MOSFET VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
ID
-4.5A -3.8A
Description
HEXFET® |
International Rectifier |
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| 1 | IRF7751PbF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free
Description
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T |
International Rectifier |
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