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PD - 95698 IRF7607PbF l Trench Technology l Ultra Low On-Resistance l N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free S S S G Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques
Lead-Free PD- 95347 IRF7603PbF www.irf.com 1 02/22/05 IRF7603PbF 2 www.irf.com IRF7603PbF www.irf.com 3 IRF7603PbF 4 www.irf.com IRF7603PbF www.irf.com 5 IRF7603PbF 6 www.irf.com IRF7603PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) D -B- 3 3 E -A- 8765 12
PD - 9.1262D IRF7603 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S S S G 1 2 8 7 A A D D D D VDSS = 30V RDS(on) = 0.035Ω 3 4 6 5 Description Fift
DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 51 8.3 3.5 m: nC V Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD
DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 51 8.3 3.5 m: nC V Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS(on) for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD
PD - 93845 PROVISIONAL IRF7607 HEXFET® Power MOSFET 1 8 Trench Technology q Ultra Low On-Resistance q N-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel q S S S G A A D D D D 2 7 VDSS = 20V RDS(on) = 0.030Ω 3 6 4 5 T o p V ie w Description Ne
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