Datasheet IRF7555PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF7555PBF	Power MOSFET ( Transistor ) PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing te	International Rectifier

IRF7555 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF7555PBF	Power MOSFET ( Transistor ) PD -95993 IRF7555PbF l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize ad	International Rectifier
IRF7555	Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm) PD -91865B IRF7555 HEXFET® Power MOSFET Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel q S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.055Ω 3 6 4 5 T o p V i	International Rectifier

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