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Datasheet IRF7555 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF7555 | Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm) PD -91865B
IRF7555
HEXFET® Power MOSFET
Trench Technology q Ultra Low On-Resistance q Dual P-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel
q
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -20V RDS(on) = 0.055Ω
3
6
4
5
T o p V ie w
Description
Ne |
 International Rectifier |
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| 1 | IRF7555PBF | Power MOSFET ( Transistor ) PD -95993
IRF7555PbF
l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free
S1 G1 S2 G2
Description
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing te |
International Rectifier |
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