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Datasheet IRF741 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 17 | IRF741 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF741
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.55Ω(Max) ·Fast Switching Speed
APPLICATIONS ·Designed especially f |
 Inchange Semiconductor |
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| 16 | IRF741 | N-Channel Power MOSFETs IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40
N-Channel Power MOSFETs 10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay a |
 ART CHIP |
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| 15 | IRF741 | N-Channel Power MOSFETs/ 10A/ 350V/400V |
 Fairchild Semiconductor |
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| 14 | IRF7410 | HEXFET Power MOSFET www.DataSheet.in
PD - 94025
IRF7410
HEXFET® Power MOSFET
l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel
VDSS
-12V
RDS(on) max
7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V
ID
-16A -13.6A -11.5A
Description
These P-Channel HEXFET® Power MOSFE |
 International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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