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Datasheet IRF7342 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRF7342 | Power MOSFET ( Transistor ) PD -91859
IRF7342
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
VDSS = -55V RDS(on) = 0.105Ω
3
6
4
5
T op V i |
International Rectifier |
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5 | IRF7342D2 | MOSFET & Schottky Diode PD- 94101A
IRF7342D2
FETKY MOSFET & Schottky Diode
l l l l l
TM
Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint
A A S G
1
8
K K D D
VDSS = -55V RDS(on) = 105mΩ Schottky Vf = 0.61V
2
7
3 |
International Rectifier |
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4 | IRF7342D2PBF | MOSFET & Schottky Diode PD- 95299
IRF7342D2PbF
Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schottky Rectifier l SO-8 Footprint l Lead-Free Description
l
FETKY MOSFET & Schottky Diode
A A S G
1 2 3 4 8 7 6 5
TM
K K D D
VDSS = -55V RDS(on) = |
International Rectifier |
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3 | IRF7342PBF | Power MOSFET ( Transistor ) PD - 95200
IRF7342PbF
Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -55V RDS(on) = 0.105Ω
6 |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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