IRF734 전자부품 데이터시트

Power MOSFET IRF734, SiHF734 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 V 45 6.6 24 Single 1.2 TO-220 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free

PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 55V R

IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free Description These HEXFET ® Power MOSFE

PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D

PD - 94391B IRF7341Q Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V ID 5.1A 4.42A Benefits • • • • • • Advanced Pr

Benefits • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8 pac

PD -91859 IRF7342 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -55V

PD- 94101A IRF7342D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -55V RDS(on