IRF733
Inchange Semiconductor
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF733
DESCRIPTION ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max) ·Fast Switching Spe
IRF7331
International Rectifier
HEXFET Power MOSFETPD - 94225
IRF7331
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel
VDSS
20V
RDS(on) max (mΩ)
30@VGS = 4.5V 45@VGS = 2.5V
ID
7.0A 5.6A
These N-Channel HEXFET® power MOSFETs from Interna
IRF7331PbF
International Rectifier
HEXFET Power MOSFETPD - 95266
IRF7331PbF
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
VDSS
20V
RDS(on) max (mW)
30@VGS = 4.5V 45@VGS = 2.5V
ID
7.0A 5.6A
These N-Channel HEXFET® power MOSFETs
IRF7331PbF-1
International Rectifier
HEXFET Power MOSFETVDS RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical) ID
(@TA = 25°C)
20 V
30 mΩ
45
13 nC
7.0 A
IRF7331TRPbF-1
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Features Industry-standard pinout SO-8 Package
C
IRF7331TRPBF-1
International Rectifier
Power MOSFET ( Transistor )VDS RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical) ID
(@TA = 25°C)
20 V
30 mΩ
45
13 nC
7.0 A
IRF7331TRPbF-1
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Features Industry-standard pinout SO-8 Package
C
IRF7335D1
International Rectifier
Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODEPD- 94546
IRF7335D1
• Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier
Dual FETKY
Co-Pa