IRF731
Inchange Semiconductor
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF731
DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max) ·Fast Switching Spe
IRF7311
International Rectifier
HEXFET Power MOSFETPD - 91435C
IRF7311
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
8 7
D1 D1 D2 D2
2
VDSS = 20V RDS(on) = 0.029Ω
3
6
4
5
T o p V ie w
Descr
IRF7313
International Rectifier
HEXFET POWER MOSFETPD - 91480B
IRF7313
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated
HEXFET® Power MOSFET
S1 G1 S2 G2
1 8 7
D1 D1 D2 D2
2
VDSS = 30V RDS(on) = 0.029Ω
3
6
4
5
Top View
Fifth Genera
IRF7313PBF
International Rectifier
HEXFET Power MOSFETPD - 95039
IRF7313PbF
l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
VDSS = 30V RDS(on) = 0.029Ω
3 4
6 5
Top View
F
IRF7313QPBF
International Rectifier
HEXFET Power MOSFETPD - 96125
IRF7313QPbF
HEXFET® Power MOSFET
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free
S1 G1 S2 G2
1
IRF7314
International Rectifier
HEXFET Power MOSFETPD - 9.1436B
PRELIMINARY
l l l l l
IRF7314
HEXFET® Power MOSFET
8 7
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
D1 D1 D2 D2
2
VDSS = -20V RDS(on) = 0.058Ω
3
6
4
5
T op