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Datasheet IRF7309 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRF7309 | HEXFET Power MOSFET PD - 9.1243B
PRELIMINARY
IRF7309
N-CHANNEL MOSFET 1 8
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fifth Generation HEXFETs from International Rectifier utili |
 International Rectifier |
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| 2 | IRF7309QPBF | Power MOSFET ( Transistor ) PD - 96135A
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieve |
International Rectifier |
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| 1 | IRF7309TRPBF-1 | Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = 10V)
Qg (max) ID
(@TA = 25°C)
N-CH 30
0.05
25
4.0
P-CH -30
0.10
25
-3.0
V V
Ω nC A
IRF7309TRPbF-1
HEXFET® Power MOSFET
SO-8
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial q |
International Rectifier |
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