IRF720
Intersil Corporation
3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFETIRF720
Data Sheet July 1999 File Number
1579.4
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified lev
IRF720
Inchange Semiconductor
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF720
·DESCRITION ·Designed especially for high voltag
IRF720
Vishay
Power MOSFET ( Transistor )www.vishay.com
IRF720, SiHF720
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 V VGS = 10 V
20 3.3 11 Single
D
TO-220AB
1.8
S D G
G
S N-Channel MOSFET
FEATURES
• Dynamic dV/dt
IRF7201
International Rectifier
HEXFET Power MOSFETPD- 91100D
IRF7201
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S S S G
1 8
A A D D D D
2
7
VDSS = 30V RDS(on) =