IRF710A
Fairchild Semiconductor
Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦
IRF710A
Inchange Semiconductor
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF710A
·FEATURES ·Avalanche Rugged Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Low RDS(ON) : 2.815 Ω (Typ.)
·DESCRITION ·d