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IRF654B/IRFS654B November 2001 IRF654B/IRFS654B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-stat
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF654A ·FEATURES ·Avalanche Rugged Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Low RDS(ON) : 0.108 Ω (Typ.) ·DESCRITION ·designed for applications such as switchi
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF650A FEATURES ·Low RDS(on) = 0.073Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supp
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Advanced Power MOSFET FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.108 Ω (Typ.) IRF654A BVDSS = 250 V RDS(o
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 IRF650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 2
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