IRF650
Fairchild Semiconductor
200V N-Channel MOSFETIRF650B / IRFS650B
IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially
IRF650A
Samsung
Advanced Power MOSFET
)($785(6
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IRF650A
Fairchild
Advanced Power MOSFETAdvanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.)
1 2 3
IRF650A
IRF650A
Inchange Semiconductor
N-Channel Mosfet TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF650A
FEATURES ·Low RDS(on) = 0.073Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·De
IRF650B
Fairchild Semiconductor
200V N-Channel MOSFETIRF650B / IRFS650B
IRF650B / IRFS650B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially